Control of molecular doping in conjugated polymers by thermal annealing
Control of molecular doping in conjugated polymers by thermal annealing
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DOI：
10.1016/j.orgel.2017.05.019
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发表时间：
2017-08
影响因子：
3.2
通讯作者：
Ryo Fujimoto;S. Watanabe;Yu Yamashita;J. Tsurumi;H. Matsui;T. Kushida;C. Mitsui;H. Yi;V. Podzorov;J. Takeya
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文献类型：
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作者：
Ryo Fujimoto;S. Watanabe;Yu Yamashita;J. Tsurumi;H. Matsui;T. Kushida;C. Mitsui;H. Yi;V. Podzorov;J. Takeya
掺杂是半导体加工最基本的构件之一，能够适应电荷浓度和电导率。尽管多年来人们试图研究有机半导体的各种掺杂和反掺杂方法，但到目前为止，它们的使用一直受到限制。在这里，我们提出了一种方法来精确控制掺杂剂注入的噻吩基聚合物导体的掺杂程度。在相对较低的温度(约110℃)下进行简单的后退火，可以显著降低电荷载流子浓度，并利用电子自旋共振和光学吸收技术对其可控性进行综合评估。在较高的掺杂范围内，证实了具有理想霍尔效应和弱局域化的带状电荷输运。
Doping is one of the most fundamental building blocks for semiconductor processing, and enables adaptation to both charge concentration and electrical conductivity. Despite attempts to investigate various doping and de-doping methods for organic semiconductors over many years, their use has been limited to date. Here, we present a method to precisely control the degree of doping in dopant-implanted thiophene-based polymeric conductors. A simple post annealing at a relatively low temperature of approximately 110 °C can significantly diminish the charge carrier concentration with precision, where the controllability is evaluated comprehensively using electron spin resonance and optical absorption techniques. At higher doping regimes, a band-like charge transport with an ideal Hall effect and weak localization is confirmed.