A 41-GHz 19.4-dBm PSATCMOS Doherty Power Amplifier for 5G NR Applications
A 41-GHz 19.4-dBm PSATCMOS Doherty Power Amplifier for 5G NR Applications
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DOI：
10.1109/icta56932.2022.9962970
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发表时间：
2022-10
期刊：
影响因子：
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通讯作者：
Zheng Li;Zixin Chen;Qiaoyu Wang;Jian Pang;A. Shirane;K. Okada
中科院分区：
文献类型：
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作者：
Zheng Li;Zixin Chen;Qiaoyu Wang;Jian Pang;A. Shirane;K. Okada
本文介绍了一款采用标准65 nm CMOS技术的41 GHz Doherty功率放大器（PA），用于5G新无线电（NR）应用。该功率放大器采用基于变压器的并联Doherty结构，提高了功率附加效率（PAE）。并提出了可调谐90°混合电路的输出相位补偿方案。在1V电源电压下，在41.5GHz处，饱和输出功率（PSAT）为19.4dBm，OP1dB为18.6dBm。峰值PAE和在6dB输出功率回退（PBO）时的PAE分别为30.4%和19.2%。芯片核心面积为0.22 mm2，静态功耗为76mW。
In this paper, a 41-GHz Doherty power amplifier (PA) in a standard 65nm CMOS technology is presented for 5G New Radio (NR) applications. The PA implements transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). And the tunable 90° hybrid is proposed for out-put phase compensation. This work achieves a saturated output power (PSAT) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under 1-V power supply. The peak PAE and the PAE at 6-dB out-put power back-off (PBO) are 30.4% and 19.2%, respectively. The core chip area is 0.22 mm2with a static power consumption of 76mW.