Floquet-Engineered Valleytronics in Dirac Systems
Floquet-Engineered Valleytronics in Dirac Systems
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DOI：
10.1103/physrevlett.116.016802
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发表时间：
2016-01-08
影响因子：
8.6
通讯作者：
Seradjeh, Babak
中科院分区：
文献类型：
--
作者：
Kundu, Arijit;Fertig, H. A.;Seradjeh, Babak
谷自由度如果能得到有效控制，将为量子信息处理提供潜在的资源。我们讨论了一种光学方法来解决这个问题，其中强光破坏了二维狄拉克材料的电子对称性。由此产生的准能量结构可能会因不同的谷而不同，因此系统的Floquet物理可以被利用来产生高度极化的谷电流。利用这一物理特性可以实现一种性能由光学决定的谷阀。我们提出了一种具体的方法来实现这种谷电子学在石墨烯以及一个简单的模型反演对称性破缺狄拉克材料。我们用数值方法研究了这一效应，并证明了它对光学参数的中度紊乱和小偏差的鲁棒性。
Valley degrees of freedom offer a potential resource for quantum information processing if they can be effectively controlled. We discuss an optical approach to this problem in which intense light breaks electronic symmetries of a two-dimensional Dirac material. The resulting quasienergy structures may then differ for different valleys, so that the Floquet physics of the system can be exploited to produce highly polarized valley currents. This physics can be utilized to realize a valley valve whose behavior is determined optically. We propose a concrete way to achieve such valleytronics in graphene as well as in a simple model of an inversion-symmetry broken Dirac material. We study the effect numerically and demonstrate its robustness against moderate disorder and small deviations in optical parameters.