The transition state of disilane plasma
The transition state of disilane plasma
复制标题
乙硅烷等离子体的过渡态
DOI：
10.1016/0927-0248(93)90038-5
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发表时间：
1993
影响因子：
6.9
通讯作者：
T. Shimada
中科院分区：
文献类型：
--
作者：
K. Azuma;Masahiro Tanaka;M. Nakatani;T. Shimada
通过测量乙硅烷等离子体中的电子能量，并结合发射光谱和薄膜性质研究了乙硅烷等离子体分解的初始过渡态，发现在放电开始时，没有观察到SiH_2 O的发射，等离子体中的电子能量比稳态时低约10倍.这些现象是由于点火后压力突然升高，接着发生乙硅烷分解引起的，在能量不足的情况下，乙硅烷分解有利于生成硅烯，生成多孔氢化非晶硅（a-Si：H）薄膜，我们将证明缩短乙硅烷分解的等离子体能量不足的初始过渡期的重要性。在反应开始时保持气体压力恒定，可以避免等离子体能量的降低，并获得具有良好光电性能的a-Si：H薄膜。
The initial transition state in the plasma decomposition of disilane was investigated by measuring the electron energy in a disilane plasma, and by studying both optical emission spectroscopy and film properties.At the beginning of the discharge, the emission of SiH∗was not observed, and the electron energy in the plasma was about 10 times lower than in the steady state. These phenomena were caused by an abrupt increase of the pressure just after the ignition, followed by disilane decomposition.Under insufficient energy conditions, production of silylene is highly favoured by the disilane decomposition which gives porous hydrogenated amorphous silicon (a-Si:H) films.We shall prove the importance to shorten the initial transition period in which the plasma energy is insufficient for disilane decomposition. Keeping the gas pressure constant at the beginning of the reaction enables to avoid the depression of the plasma energy and to obtain a-Si:H films with good optoelectronic properties.