Solution‐Grown Organic Single‐Crystal Field‐Effect Transistors with Ultrahigh Response to Visible‐Blind and Deep UV Signals
Solution‐Grown Organic Single‐Crystal Field‐Effect Transistors with Ultrahigh Response to Visible‐Blind and Deep UV Signals
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DOI：
10.1002/aelm.201500136
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发表时间：
2015-08
影响因子：
6.2
通讯作者：
Gang Wu;Chen Chen-Chen;Shuang Liu;Congcheng Fan;Hanying Li;Hongzheng Chen
中科院分区：
文献类型：
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作者：
Gang Wu;Chen Chen-Chen;Shuang Liu;Congcheng Fan;Hanying Li;Hongzheng Chen
采用低成本溶液工艺制备的可见光透明的2，7-二辛基[1]苯并噻吩并[3，2-B][1]苯并噻吩（C8-BTBT）单晶带作为紫外有源场效应晶体管的沟道层。由于C8-BTBT单晶具有良好的电荷传输能力，该器件对可见盲和深紫外信号具有良好的响应。在非常弱的365 nm UV层压（0.2 mW cm−2）的情况下，在Vg = −23 V，Vds = −30 V时，光暗电流比（P）和光响应度（R）分别达到3.0 × 104和1200 A W − 1。这是有机紫外光探测器的最高记录。这项工作提供了一种高性能，低能量的排气紫外传感器的可见光干扰或紫外控制的存储设备的可能性，并打开了一个实用的途径，实现深紫外信号的灵敏检测。
Visible‐light transparent 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) single crystal ribbons prepared by low‐cost solution process are applied as the channel layer of the UV active field‐effect transistor. The device exhibits ultrahigh response to visible‐blind and deep UV signals because of the good charge transport ability of the C8‐BTBT single‐crystals. In the case of very weak 365 nm UV lamination (0.2 mW cm−2), the photo to dark current ratio (P) and photoresponsivity (R) reach to 3.0 × 104 and 1200 A W−1 at Vg = −23 V, Vds = −30 V. When 1 mW cm−2 280 nm deep UV light is applied, the P and R value is 8300 and 44 A W−1, respectively. The result is the highest record in the organic UV photodetectors ever reported. This work offers the possibility of fabricating a high‐performance, low‐energy exhaust UV sensor free of visible‐light interference or UV controlled memory device, and opens a practical avenue for the realization of sensitive detection of deep UV signals.