Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
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DOI：
10.1038/s41598-017-04925-w
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发表时间：
2017-07
影响因子：
4.6
通讯作者：
Mengxing Sun;D. Xie;Yilin Sun;Weiwei Li;Changjiu Teng;Jianlong Xu
中科院分区：
文献类型：
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作者：
Mengxing Sun;D. Xie;Yilin Sun;Weiwei Li;Changjiu Teng;Jianlong Xu
受二维材料独特的、厚度依赖的能带结构的启发，我们研究了基于剥离态横向多层/单层MoS 2异质结的光电探测器的电子和光学性质。在Vgs = 10 V时，整流比为103，具有良好的栅控整流特性，为异质结的存在提供了证据。在紫外光到可见光的照射下，多层/单层MoS 2异质结显示出优异的光电探测性能，在470 nm光照射下，其光响应率为103 A/W，光敏度为1.7 × 105，探测率为7 × 1010 Jones。观察并分析了在正栅压下的异常光响应，表明异质结在光电流产生过程中的重要作用。我们相信这些结果有助于更好地理解多层/单层MoS 2异质结能带排列的基本物理机制，并为新型电子和光电器件提供了可行的解决方案。
Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 103 at Vgs = 10 V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS2 heterojunction shows outstanding photodetective performance, with a photoresponsivity of 103 A/W, a photosensitivity of 1.7 × 105 and a detectivity of 7 × 1010 Jones at 470 nm light illumination. Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process. We believe that these results contribute to a better understanding on the fundamental physics of band alignment for multilayer/monolayer MoS2 heterojunction and provide us a feasible solution for novel electronic and optoelectronic devices.