Electrical resistivity anisotropy in layered p-SnSe single crystals
Electrical resistivity anisotropy in layered p-SnSe single crystals
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DOI：
10.1023/a:1008960305097
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发表时间：
2000-02-01
影响因子：
2.8
通讯作者：
Batra, NM
中科院分区：
文献类型：
--
作者：
Agarwal, A;Vashi, MN;Batra, NM
采用直接气相输运（DVT）和化学气相输运（CVT）技术生长了p型SnSe单晶。直流电阻率各向异性已被调查的第一次在这些层状晶体。与CVT生长的晶体相比，DVT生长的晶体具有大的各向异性比和更高的激活能。电子显微镜检查显示DVT生长的晶体中存在大量的堆垛层错。电阻率各向异性相应地讨论了堆垛层错。
Single crystals of p-type SnSe were grown by both direct vapor transport (DVT) and chemical vapor transport (CVT) techniques. The d.c. electrical resistivity anisotropy has been investigated for the first time in these layered crystals. The DVT grown crystals exhibited a large anisotropy ratio and also a higher activation energy compared to that of CVT grown crystals. The electron microscopic examination revealed the presence of a large concentration of stacking faults in the DVT grown crystals. The resistivity anisotropy is accordingly discussed in terms of stacking disorder.