Applying Capacitive Energy Storage for In Situ Manipulation of Magnetization in Ordered Mesoporous Perovskite-Type LSMO Thin Films
Applying Capacitive Energy Storage for In Situ Manipulation of Magnetization in Ordered Mesoporous Perovskite-Type LSMO Thin Films
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DOI：
10.1021/acsami.7b01978
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发表时间：
2017-07-12
影响因子：
9.5
通讯作者：
Brezesinski, Torsten
中科院分区：
文献类型：
--
作者：
Reitz, Christian;Wang, Di;Brezesinski, Torsten
介观结构非硅酸盐材料，特别是混合金属氧化物，近年来受到广泛关注，因为它们具有许多应用潜力。通过聚合物模板法，首次制备了具有23 nm孔的连续三维立方网络结构的钙钛矿型镧锶锰氧化物（La 1-xSrxMnO 3，LSMO，x = 0.15 ~ 0.30）薄膜。掠入射X射线散射，X射线光电子能谱，卢瑟福背散射光谱，电子显微镜和断层扫描的表征结果表明，浸涂溶胶-凝胶衍生的膜在组成和形态方面都是高质量的，并且它们在700 ℃以上是稳定的。磁性和磁输运测量表明，具有最高锶浓度的材料在室温下是铁磁性的，并且在270 K以下表现出金属电阻率行为。此外，其行为不同于外延层（例如，增强的低场磁阻效应）。它还表明，载流子（电子和空穴）可以通过电容双层充电到聚合物模板介观结构LSMO膜诱导。这种利用离子液体门控的静电掺杂在室温下引起磁化率的较大相对变化，并且是原位调整磁相图的可行技术。
Mesostructured nonsilicate materials, particularly mixed-metal oxides, are receiving much attention in recent years because of their potential for numerous applications. Via the polymer-templating method, perovskite-type lanthanum strontium manganese oxide (La1-xSrxMnO3, LSMO, with x approximate to 0.15 to 0.30) with a continuous 3D cubic network of 23 nm pores is prepared in thin-film form for the first time. Characterization results from grazing incidence Xray scattering, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and electron microscopy and tomography show that the dip-coated sol gel-derived films are of high quality in terms of both composition and morphology and that they are stable to over 700 degrees C. Magnetic and magnetotransport measurements demonstrate that the material 'with the highest strontium concentration is-ferromagnetic at room temperature and exhibits metallic resistivity behavior below 270 K. Besides, it behaves differently from epitaxial layers (e.g., enhanced low-field magnetoresistance effect). It is also shown that carriers (electrons and holes) can be induced into the polymer-templated mesostructured LSMO films via capacitive double-layer charging. This kind of electrostatic doping utilizing ionic liquid gating causes large relative changes in magnetic susceptibility at room temperature and is a viable technique to tune the magnetic phase diagram in situ.