High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors
High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors
复制标题
DOI：
10.1038/s43246-023-00331-0
复制
发表时间：
2023-01-26
影响因子：
7.8
通讯作者：
Takeya，Jun
中科院分区：
文献类型：
--
作者：
Wei，Xiaozhu;Kumagai，Shohei;Takeya，Jun
溶液法制备的单晶有机半导体(OSCs)和非晶态金属氧化物半导体(MOSS)分别是高迁移率p沟道和n沟道薄膜晶体管(TFT)的发展方向。因此，有机−无机混合互补电路具有很大的应用潜力。然而，OSCs和MOSS之间的一些化学不相容，如耐热性和耐化学性，使得基于溶液处理的OSC和MOS的TFT很难合理地集成到相同的衬底上。在这里，我们报告了一种基于溶液处理半导体的合理集成方法，从材料的角度仔细管理器件配置和沉积和图案化技术。平衡的高性能以及均匀的TFT制作导致了密集集成的五级环形振荡器，每级的传输延迟为1.3uM S。
Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements. However, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS onto the same substrates. Here, we report a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from a materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with a short propagation delay of 1.3 µs per stage.