Modeling the self-heating effect in SiGe HBTs
Modeling the self-heating effect in SiGe HBTs
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DOI：
10.1109/bipol.2002.1042895
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发表时间：
2002-12
期刊：
影响因子：
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通讯作者：
H. Mnif;T. Zimmer;J. Battaglia;B. Ardouin
中科院分区：
文献类型：
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作者：
H. Mnif;T. Zimmer;J. Battaglia;B. Ardouin
本文介绍了一种模拟硅锗 (SiGe) 异质结双极晶体管 (HBT) 自热现象的新方法。该方法基于传热微分方程的物理分辨率。该模型与大多数商业电路模拟器中使用的电热模型进行了比较。这种新方法产生了与测量数据更好的自热一致性。为了进行验证，它被实施到最近的紧凑模型中。
This paper describes a new approach for modeling the self-heating phenomena in silicon germanium (SiGe) heterojunction bipolar transistors (HBT). This approach is based on the physical resolution of the heat transfer differential equation. The model is compared to the electro-thermal model used in most commercial circuit simulators. This new approach produces the better self-heating agreement with measured data. For its validation, it is implemented into a recent compact model.