Oxygen plasma-treatment effects on Si transfer.
Oxygen plasma-treatment effects on Si transfer.
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DOI：
10.1021/la046795v
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发表时间：
2005-05
期刊：
影响因子：
--
通讯作者：
Bryan A. Langowski;K. Uhrich
中科院分区：
文献类型：
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作者：
Bryan A. Langowski;K. Uhrich
氧等离子体处理通常用于增加用于微接触印刷 (muCP) 水性油墨的聚(二甲基硅氧烷) (PDMS) 印模的亲水性。文献综述表明，目前采用多种等离子体参数来修改印模表面。然而，人们对这些参数（例如功率、腔室压力、持续时间）对 muCP 过程中常见的印模中低分子量含硅碎片的不良转移的影响知之甚少。为了研究氧等离子体处理对硅转移的影响，在不同条件下用氧等离子体处理未图案化的 PDMS 印模，并用去离子水在等离子体激活的聚甲基丙烯酸甲酯 (PMMA) 基材上进行印模。压印后，使用 X 射线光电子能谱 (XPS) 对 PMMA 基材进行分析，以量化和表征基材表面上存在的硅。此外，使用扫描电子显微镜 (SEM) 对使用过的 PDMS 印模进行分析，以观察氧等离子体处理过程中发生的形貌变化。 XPS 结果表明，与未处理的 PDMS 印模相比，所研究的所有等离子体处理均显着减少了 muCP 过程中经过处理的印模的 Si 转移量，并且转移来源是未被氧等离子体去除的残留 PDMS 碎片。 SEM 结果表明，尽管经过处理的印模经历了各种形貌变化，但印模形貌与印模硅转移程度之间不存在相关性。
Oxygen plasma-treatment is commonly used to increase the hydrophilicity of poly(dimethylsiloxane) (PDMS) stamps used for microcontact printing (muCP) aqueous-based inks. Review of the literature reveals that a wide range of plasma parameters are currently employed to modify stamp surfaces. However, little is known about the effect of these parameters (e.g., power, chamber pressure, duration) on the undesirable transfer of low-molecular-weight silicon-containing fragments from the stamps that commonly occurs during muCP. To study the effect of oxygen plasma-treatment on Si transfer, unpatterned PDMS stamps were treated with oxygen plasma under various conditions and used to stamp deionized water on plasma-activated poly(methyl methacrylate) (PMMA) substrates. Once stamped, the PMMA substrates were analyzed with X-ray photoelectron spectroscopy (XPS) to quantify and characterize silicon present on the substrate surface. In addition, used PDMS stamps were analyzed with scanning electron microscopy (SEM) to observe topographical changes that occur during oxygen plasma-treatment. XPS results show that all plasma treatments studied significantly reduced the amount of Si transfer from the treated stamps during muCP as compared to untreated PDMS stamps and that the source of transfer is residual PDMS fragments not removed by oxygen plasma. SEM results show that, although the treated stamps undergo a variety of topographical changes, no correlation exists between stamp topography and extent of Si transfer from the stamps.