Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
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DOI：
10.1063/1.2089182
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发表时间：
2005-10
影响因子：
4
通讯作者：
Tao Wang;J. Bai;P. Parbrook;A. G. Cullis
中科院分区：
文献类型：
--
作者：
Tao Wang;J. Bai;P. Parbrook;A. G. Cullis
我们证明了空气桥接的横向生长的Al 0.98Ga 0.02N层通过引入下面的多孔AlN缓冲层通过金属有机化学气相沉积具有显着的位错减少。通过改变生长条件，一个多孔的AlN层和一个原子级平坦的AlN层已获得比较，证实了原子力显微镜。随后在相同条件下在多孔AlN层和原子级平坦AlN层上生长Al0.98Ga0.02N层。通过透射电子显微镜观察到，与在原子级平坦的AlN层上生长的层相比，在多孔AlN缓冲层上生长的Al0.98Ga0.02N层实现了显著的位错减少。已经观察到来自在多孔AlN缓冲层上生长的层的清晰气泡，而相比之下，没有来自平坦AlN缓冲层上的层的任何气泡，证实了位错减少的横向生长机制。不对称X射线衍射研究还表明，...
We demonstrated air-bridged lateral growth of an Al0.98Ga0.02N layer with significant dislocation reduction by introduction of a porous AlN buffer underneath via metalorganic chemical vapor deposition. By modifying growth conditions, a porous AlN layer and an atomically flat AlN layer have been obtained for comparison, confirmed by atomic force microscopy. An Al0.98Ga0.02N layer was subsequently grown on both the porous AlN layer and the atomically flat AlN layer under identical conditions. Significant dislocation reduction was achieved for the Al0.98Ga0.02N layer grown on the porous AlN buffer layer, compared to the layer grown on the atomically flat AlN layer, as observed by transmission electron microscopy. Clear bubbles from the layer grown on the porous AlN buffer layer have been observed, while in contrast, there was not any bubble from the layer on the flat AlN buffer, confirming the mechanism of lateral growth for dislocation reduction. Asymmetric x-ray diffraction studies also indicated that the ...