Capacitance studies of cobalt oxide films formed via electrochemical precipitation
Capacitance studies of cobalt oxide films formed via electrochemical precipitation
复制标题
DOI：
10.1016/s0378-7753(01)01012-6
复制
发表时间：
2002-06-01
影响因子：
9.2
通讯作者：
Weidner, JW
中科院分区：
文献类型：
--
作者：
Srinivasan, V;Weidner, JW
通过电化学沉淀氢氧化物并在空气中加热以形成Co 3 O 4来制备氧化钴膜。由此产生的氧化膜表现为电容器。研究了这些材料，强调它们在设备中用作正极或负极。在不同的加热温度下的材料的电容进行了估计，并洞察到电荷存储机制。可以看出，钴氧化物中的电荷存储与镍氧化物中的电荷存储相似，尽管它们的电容不同。虽然，当用作正极时，该材料显示出劣于氢氧化镍/氧化镍，但作为负极时，它被认为是上级的。具有NiO作为正电极和CO 3 O 4作为负电极的非对称电容器保证在大电压窗口上具有足够的电容。(C)2002 Elsevier Science B. V.保留所有权利。
Cobalt oxide films were prepared by electrochemically precipitating the hydroxide and heating it in air to form Co3O4. The resulting oxide films behave as a capacitor. The materials were studied emphasizing their use as either positive or negative electrodes in devices. The capacitance of the material was estimated at different heating temperatures and insight was gained into the charge storage mechanism. It was seen that the charge storage in cobalt oxide was similar to that of nickel oxide, although their capacitances were different. While, the material was shown to be inferior to nickel hydroxide/oxide when used as a positive electrode, it was seen to be superior as a negative. An asymmetric capacitor with NiO as a positive electrode and CO3O4 as a negative promises adequate capacitance over a large voltage window. (C) 2002 Elsevier Science B.V. All rights reserved.