Optical amplification in Er/Yb silicate slot waveguide
Optical amplification in Er/Yb silicate slot waveguide
复制标题
Er/Yb 硅酸盐缝隙波导中的光放大
DOI：
10.1364/ol.37.001427
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发表时间：
2012-05-01
期刊：
影响因子：
3.6
通讯作者：
Zhou, Zhiping
中科院分区：
文献类型：
--
作者：
Guo, Ruimin;Wang, Bing;Zhou, Zhiping
有源槽波导是通过将低折射率 Er/Yb 硅酸盐材料嵌入高折射率硅中来制造的。通过 1476 nm 泵浦，在 6 mm 长的槽波导上观察到 1.53 μmin 处的 1.7 dB 信号增强。峰值 Er 发射截面确定为 7.53 x 10(-21) cm(2)，激发的 Er 离子分数为 0.17。我们的实验表明，绝缘体上硅 (SOI) 的上部 c-Si 和沉积的 α-Si 中的缺陷会扭曲光致发光光谱并阻止进一步的光学放大。这种负面影响可以通过退火处理得到部分纠正，退火处理可以使泵浦光更好地传播，从而在夹层的 Er/Yb 硅酸盐中产生更强的激发。这些缺陷也会影响 1.53 μm 衰减曲线，并且是有源缝隙波导中主要的寿命缩短机制。 (C) 2012年美国光学学会
Active slot waveguides were fabricated by embedding low-index Er/Yb silicate material in high-index silicon. A 1.7 dB signal enhancement at 1.53 mu min a 6 mm-long slot waveguide was observed through 1476 nm pumping. The peak Er emission cross-section is determined as 7.53 x 10(-21) cm(2) and the excited Er ion fraction is 0.17. Our experiment shows that the defects in upper c-Si of Si-on-insulator (SOI) and deposited alpha-Si distorts photoluminescence spectrum and prevents further optical amplification. This negative effect can be partly corrected through annealing treatment, which allows better propagation of the pump light, therefore, stronger excitation in the sandwiched Er/Yb silicate. The defects also affect the 1.53 mu m decay curve and are the dominant lifetime reduction mechanism in the active slot waveguide. (C) 2012 Optical Society of America