Pr-Silicate Ultrathin Films for High-k Gate Dielectric Prepared by Metal-Organic Chemical Vapor Deposition

Pr-Silicate Ultrathin Films for High-k Gate Dielectric Prepared by Metal-Organic Chemical Vapor Deposition
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金属有机化学气相沉积法制备高k栅介质用硅酸镨超薄膜

DOI:
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发表时间:
2004
期刊:
2004 Electronic Materials Conference Technical Program
影响因子:
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通讯作者:
Yoshishige Tsuchiya
Yoshishige Tsuchiya
中科院分区:
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文献类型:
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作者:
M.Yamazato;et al.;鄭 仰東;Hirotsugu Fujita;Yoshishige Tsuchiya

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