FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth
FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth
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DOI：
10.1016/j.matchemphys.2016.03.010
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发表时间：
2016-07
影响因子：
4.6
通讯作者：
K. Kachel;D. Siche;S. Golka;P. Sennikov;M. Bickermann
中科院分区：
文献类型：
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作者：
K. Kachel;D. Siche;S. Golka;P. Sennikov;M. Bickermann
FTIR 废气分析用于建立 GaN 单晶化学气相生长的化学反应路径。该生长过程在实验室规模上利用经典的德固赛工艺合成 HCN 作为 Ga 的传输剂。以 GaCN 作为 Ga 和 C 前体，该过程与卤化物气相外延 (HVPE) 非常相似，其中 GaCl 是 Ga 前体，并且在两种方法中，活性氮源都是 NH3。给出了纯 HCN 合成及其与蒸汽生长相结合的光谱，可以有效优化生长参数，尤其是气流参数。
FTIR exhaust gas analysis is used to establish chemical reactions paths in chemical vapor growth of GaN single crystals. The growth process utilizes the classical Degussa process on a lab scale to synthesize HCN as a transport agent for Ga. With GaCN as Ga and C precursor, the process is very similar to halide vapor phase epitaxy (HVPE), where GaCl is the Ga precursor and in both methods, the source of reactive nitrogen is NH3. Spectra are presented for the pure HCN synthesis and its combination with vapor growth, allowing the effective optimization of growth parameters, especially of gas flows.