State of the art on gate insulation and surface passivation for GaN-based power HEMTs
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
复制标题
DOI：
10.1016/j.mssp.2017.09.028
复制
发表时间：
2018-05-01
影响因子：
4.1
通讯作者：
Yatabe, Zenji
中科院分区：
文献类型：
--
作者：
Hashizume, Tamotsu;Nishiguchi, Kenya;Yatabe, Zenji
在本文中，我们回顾了使用铝基氧化物、氮化物电介质、SiO2 和高 k 电介质的 AlGaN/GaN 和 InAlN/GaN 金属绝缘体半导体高电子迁移率晶体管 (MIS-HEMT) 的最新进展。尽管GaN MIS-HEMT一直受到阈值电压(V-TH)不稳定的困扰，但最近使用原位SiNx和(Al)GaN表面氧化的界面技术实现了具有稳定V-TH的GaN MIS-HEMT优异的直流和动态性能。此外，新的栅极电介质设计（例如纳米层压结构）已应用于 GaN HEMT。基于 GaN 的 MIS-HEMT 有时会在正向栅极偏压下表现出突然的电流饱和，我们讨论了绝缘体-半导体界面处的电子态对 GaN MIS-HEMT 电流线性度的影响。最后，我们提出了有效的表面钝化方案，结合场板结构和利用栅极区域下的多纳米通道的新兴器件结构。
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of threshold voltage (V-TH), recent interface technologies using in-situ SiNx and surface oxidation of (Al)GaN achieved excellent DC and dynamic performances of GaN MIS-HEMTs with stable V-TH. Furthermore, a new design of the gate dielectric such as a nanolaminate structure has been applied to GaN HEMTs. GaN-based MIS-HEMTs sometimes showed sudden current saturation at forward gate bias, and we discuss effects of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs. Finally, we present effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi nanochannels under the gate region.