SYNTHESIS AND CHARACTERIZATION OF NEARLY MONODISPERSE CDE (E = S, SE, TE) SEMICONDUCTOR NANOCRYSTALLITES
SYNTHESIS AND CHARACTERIZATION OF NEARLY MONODISPERSE CDE (E = S, SE, TE) SEMICONDUCTOR NANOCRYSTALLITES
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DOI：
10.1021/ja00072a025
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发表时间：
1993-09-22
影响因子：
15
通讯作者：
BAWENDI, MG
中科院分区：
文献类型：
--
作者：
MURRAY, CB;NORRIS, DJ;BAWENDI, MG
提出了一种制备高质量的CdTe（E = S，Se，Te）半导体纳米晶的简单方法。在单一反应中制备具有一致晶体结构、表面衍生化和高度单分散性的直径为约12埃至约115埃的微晶。该合成是基于通过注入热配位溶剂的有机金属试剂的热解。这提供了时间上离散的成核，并允许宏观量的纳米晶体的受控生长。从生长溶液的部分中选择性沉淀微晶分离出具有窄尺寸分布的样品（
A simple route to the production of high-quality CdE (E = S, Se, Te) semiconductor nanocrystallites is presented. Crystallites from approximately 12 angstrom to approximately 115 angstrom in diameter with consistent crystal structure, surface derivatization, and a high degree of monodispersity are prepared in a single reaction. The synthesis is based on the pyrolysis of organometallic reagents by injection into a hot coordinating solvent. This provides temporally discrete nucleation and permits controlled growth of macroscopic quantities of nanocrystallites. Size selective precipitation of crystallites from portions of the growth solution isolates samples with narrow size distributions (