Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
复制标题
DOI：
10.1116/1.4972049
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
C. Yerino;B. Liang;D. Huffaker;P. Simmonds;M. Lee
中科院分区：
文献类型：
--
作者：
C. Yerino;B. Liang;D. Huffaker;P. Simmonds;M. Lee
50多年来，III-V族化合物半导体的研究几乎完全集中在（001）取向衬底上生长的材料上。这部分是由于III-V族可以相对容易地在（001）表面上生长。然而，近年来，出现了许多关键技术，这些技术可以通过在（111）或（110）取向的衬底上生长高质量III-V的能力来实现或大大改进。这些应用包括：下一代场效应晶体管、新型量子点、纠缠光子发射体、自旋电子学、拓扑绝缘体和过渡金属二硫属元素。本文的第一个目的是提出一个全面的文献综述有关（111）和（110）衬底上的III-V族的分子束外延（MBE）生长。第二个是描述我们最近的实验结果的生长，形态，电气和光学性能的非（001）InP晶片上生长的层。以InP（111）A、InP（111）B和InP（110）衬底为例，系统地讨论了In 0.52 Al 0.48 As和In 0.53 Ga 0.47 As在这些衬底上的生长。对于每个材料系统，作者确定了增长的主要挑战，以及关键的增长参数-属性关系，趋势和相互依赖性。最后，作者总结了MBE条件需要优化的结构，光学和电学性能的GaAs，InAlAs和InGaAs生长（111）和（110）取向。在大多数情况下，作者推荐的MBE生长参数将使读者能够在这些日益重要的非（001）表面上生长高质量的材料，为令人兴奋的技术进步铺平道路。
For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III–Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In0.52Al0.48As and In0.53Ga0.47As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter–property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.