X-Ray Stress Measurement of Mounted Silicon Chips
X-Ray Stress Measurement of Mounted Silicon Chips
复制标题
已安装硅芯片的 X 射线应力测量
DOI：
10.1143/jjap.36.7411
复制
发表时间：
1997
影响因子：
1.5
通讯作者：
S. Kozaki
中科院分区：
文献类型：
--
作者：
N. Fujii;K. Inui;S. Kozaki
半导体硅芯片的应力通过适用于单晶微细区域（直径60μm）的X射线应力测定法进行测定。在将硅芯片安装到基板上之前和之后进行测量。还测量了凸块周围区域的残余应力。结果，在用树脂固定的测试片硅芯片的后侧的角部处测定了约+30至+40MPa的拉伸应力，并且在另一测试片硅芯片的焊料凸块形成表面附近发现了约+70至+80MPa的拉伸应力。
Stresses in semiconductor silicon chips were measured by an X-ray stress measurement method that is applicable to microareas (60 µ m dia.) of single crystals. The measurement was conducted before and after silicon chip mounting on a substrate. Also measured were residual stresses in areas around bumps. As a result, about +30 to +40 MPa tensile stresses were determined at the corners of the rear side of a test piece silicon chip, which was fixed with resin, and about +70 to +80 MPa tensile stresses were found near the solder-bump formed surface of another test piece silicon chip.