Calculation of critical charge of bipolar memory circuits
Calculation of critical charge of bipolar memory circuits
复制标题
双极存储电路临界电荷的计算
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
X. Zhang
中科院分区：
文献类型：
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作者：
X. Zhang
双极记忆电路中对α粒子引起的干扰的两种类型的反应是有区别的。一个是电荷敏感，另一个是电流敏感。提出了一种计算电流敏感双极存储电路临界电荷的方法，以评估各种存储电路的软错误敏感性。>
Two types of responses to alpha-particle-induced disturbance in bipolar memory circuits are differentiated. One is charge sensitive, and the other one is current sensitive. A method of calculating the critical charge for the current-sensitive bipolar memory circuits is proposed in order to evaluate the soft-error sensitivity of various memory circuits. >