Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties
Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties
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热电性能显着增强的相定义范德华肖特基结
DOI：
10.1021/acs.jpclett.7b01089
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发表时间：
2017
影响因子：
5.7
通讯作者：
Gu Yi
中科院分区：
文献类型：
--
作者：
Wang Qiaoming;Yang Liangliang;Zhou Shengwen;Ye Xianjun;Wang Zhe;Zhu Wenguang;McCluskey Matthew D.;Gu Yi
我们证明了货车范德华肖特基结定义的多层In 2 Se 3的结晶相。除了理想的二极管的行为和栅极可调电流整流，热电功率显着增强，在这些结由超过三个数量级相比，单相多层In2Se3，与热电优值接近100 ℃，在室温下。我们的研究结果表明，这些显着改善的热电性能不是由于2D量子限制效应，而是结界面处的肖特基势垒的结果，这导致热载流子输运，并改变了热电流和场驱动电流之间的平衡。这种“体积”效应将货车德瓦耳斯材料的优点扩展到几层极限之外。采用这种在货车德瓦耳斯材料之间使用能量势垒的方法，其中界面状态是最小的，预计也将提高其他2D材料的热电性能。
We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In2Se3. Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In2Se3, with the thermoelectric figure-of-merit approaching ∼1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This “bulk” effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.