Mobility degradation in a nano-MOSFET due to ballistic and high-field effects
Mobility degradation in a nano-MOSFET due to ballistic and high-field effects
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由于弹道效应和高场效应，纳米 MOSFET 的迁移率降低
DOI：
10.1109/escinano.2012.6149706
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
V. Arora
中科院分区：
文献类型：
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作者：
M. Tan;M. Riyadi;V. Arora
在寻找具有更高性能的未来设备的过程中，弹道传输已经被深入讨论了多年。由于在低于散射限制平均自由程（mfp）的长度减小的通道中没有散射，因此在弹道通道中迁移率预计会更高。然而，到目前为止，几乎所有的实验观察[1-3]都表明，当通道长度处于弹道状态时，迁移率会下降。Riyadi和Arora[4-5]提供了一个很好的解释，该解释与实验结果非常吻合，在长度低于长通道mfp的通道中迁移率下降。通过注入速度比v<sub>inj</sub>/v<sub>i</sub>)和通道速度比v<sub>inj</sub>/v<sub>i</sub> i</sub> i</sub>，突出显示了增加有效mfp的弹道mfp r <sub>B B</sub>= r <sub>0∞</sub>(v<sub>inj</sub>/v<sub>i</sub>)高于长通道平均自由程r <sub>0∞</sub>。弹道mfp更高，但机动性却低得惊人。
The ballistic transport has been intensively discussed for years in the search for future devices with higher performance. The mobility is expected to be higher in a ballistic channel due to absence of scattering in a channel with reduced length below the scattering limited mean free path (mfp). However, almost all experimental observations [1-3] so far reveal degradation of mobility when the channel length is in the ballistic regime. Riyadi and Arora[4-5] have provided an excellent explanation that agrees well with the experimental results mobility degradation in channels with lengths below the long-channel mfp. The injection from ballistic contacts is highlighted that increases the effective mfp, called ballistic mfp ℓ<sub>B</sub>=ℓ<sub>0∞</sub>(v<sub>inj</sub>/v<sub>i</sub>)that is higher than the long channel mean free path ℓ<sub>0∞</sub> by injection velocity ratio v<sub>inj</sub>/v<sub>i</sub> to channel velocity v<sub>i</sub>. The ballistic mfp is higher, yet the mobility is amazingly lower.