Covalently attached organic monolayers onto silicon carbide from 1-alkynes: molecular structure and tribological properties.
Covalently attached organic monolayers onto silicon carbide from 1-alkynes: molecular structure and tribological properties.
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DOI：
10.1021/la400040e
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发表时间：
2013-03
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影响因子：
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通讯作者：
S. Pujari;Luc Scheres;T. Weidner;J. Baio;M. Stuart;C. V. van Rijn;H. Zuilhof
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文献类型：
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作者：
S. Pujari;Luc Scheres;T. Weidner;J. Baio;M. Stuart;C. V. van Rijn;H. Zuilhof
为了改善半导体界面的摩擦学性能，我们研究了(C(X)F(2x+1))-(CH2)n-)1-炔烃和1-烯烃在碳化硅上的热接枝。得到的单分子膜显示出高达120°的静态水接触角。用X射线光电子能谱(XPS)、红外反射吸收光谱(IRRAS)和近边X射线吸收精细结构谱(NEXAFS)研究了共价键合单分子膜的化学组成。这些技术表明，在炔改性的碳化硅表面的有机-无机界面上存在缩醛基团。用原子力显微镜(AFM)研究了含氟和非含氟端基的有机单分子膜的摩擦学性能。结果表明，氟化单分子膜的附着力、摩擦力和耐磨性均显著低于未氟化的分子涂层，尤其是未加氟的碳化硅涂层。疏水性和优异的摩擦学性能的成功结合使这些强结合的氟化单分子膜有望作为高性能微电子设备的薄膜涂层应用。
In order to achieve improved tribological and wear properties at semiconductor interfaces, we have investigated the thermal grafting of both alkylated and fluorine-containing ((C(x)F(2x+1))-(CH2)n-) 1-alkynes and 1-alkenes onto silicon carbide (SiC). The resulting monolayers display static water contact angles up to 120°. The chemical composition of the covalently bound monolayers was studied by X-ray photoelectron spectroscopy (XPS), infrared reflection-absorption spectroscopy (IRRAS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. These techniques indicate the presence of acetal groups at the organic-inorganic interface of alkyne-modified SiC surfaces. The tribological properties of the resulting organic monolayers with fluorinated or nonfluorinated end groups were explored using atomic force microscopy (AFM). It was found that the fluorinated monolayers exhibit a significant reduction of adhesion forces, friction forces, and wear resistance compared with non-fluorinated molecular coatings and especially bare SiC substrates. The successful combination of hydrophobicity and excellent tribological properties makes these strongly bound, fluorinated monolayers promising candidates for application as a thin film coating in high-performance microelectronic devices.