Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.
Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.
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DOI：
10.1021/am402852y
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发表时间：
2013-10
影响因子：
9.5
通讯作者：
Insung Bae;Sun Kak Hwang;R. H. Kim;S. Kang;Cheolmin Park
中科院分区：
文献类型：
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作者：
Insung Bae;Sun Kak Hwang;R. H. Kim;S. Kang;Cheolmin Park
非易失性铁电栅场效应晶体管（Fe-FET）存储器与溶液处理的铁电聚合物是极大的兴趣，因为它们的潜力，用于低成本的灵活的设备。特别地，用于图案化具有机械柔性的高性能半导体沟道层的工艺的开发不仅对于适当的单元到单元隔离而且对于柔性非易失性存储器的阵列是必不可少的。我们展示了一个强大的印刷大规模的微图案的解决方案处理的半导体小分子/绝缘聚合物共混物的非易失性铁电聚合物存储器的高性能阵列的路线。非易失性存储器器件基于具有铁电聚合物绝缘体和微图案化半导体共混通道的顶栅/底接触Fe-FET。通过我们的选择性接触蒸发印刷实现薄的共混半导体膜的印刷微图案，其中与微图案化的弹性体聚（二甲基硅氧烷）（PDMS）模具接触的半导体小分子优先蒸发并吸收到PDMS模具中，而绝缘聚合物保持完整。具有各种形状和尺寸的良好定义的微米级图案在4英寸的大面积上很容易开发。该方法可以在晶片上进行，从而允许制造具有高度均匀的器件性能的大规模印刷Fe-FET阵列。我们统计分析了Fe-FET的记忆特性，包括开/关比，工作电压，保持力和耐久性，作为半导体薄膜的微图案尺寸的函数。此外，卷起存储器阵列，成功地分离大面积的Fe-FET印刷在柔性基板上的瞬态粘合剂层从硬基板，随后将它们转移到非平面表面。
Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.