Bridgman growth and site occupation in LuAG:Ce scintillator crystals
Bridgman growth and site occupation in LuAG:Ce scintillator crystals
复制标题
DOI：
10.1016/j.jcrysgro.2010.07.042
复制
发表时间：
2010-10-15
影响因子：
1.8
通讯作者：
Pedrini, C.
中科院分区：
文献类型：
--
作者：
Petrosyan, A. G.;Ovanesyan, K. L.;Pedrini, C.
采用垂直布里奇曼技术生长了不同激活剂浓度的LuAG：Ce单晶。晶体的表征是在实际的掺杂水平，宏观缺陷和程度的非等效取代Lu的Al八面体晶格位点。使用Ce浓度在0.05-0.55原子%范围内的2 × 2 × 8 mm（3）形状的样品进行闪烁测量。在含有>= 0.2at% Ce的样品中，性能得到了实质性改善;在LuAG：Ce（0.55at%）中测得的光产额约为26000 ph/MeV，或接近LSO的光产额。(C)2010 Elsevier BV保留所有权利。
LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2 x 2 x 8 mm(3) shaped samples with Ce concentration in the range 0.05-0.55 at%. Essential improvement of performance was demonstrated in samples containing >= 0.2 at% of Ce; the light yield measured in LuAG:Ce (0.55 at%) was about 26000 ph/MeV, or close to that of LSO.(C) 2010 Elsevier B.V. All rights reserved.