XRD Pole Figure Analysis of In2Se3Zinc-Blende Like (ZBL) Van der Waals Template for Epitaxial GaAs Lift Off
XRD Pole Figure Analysis of In2Se3Zinc-Blende Like (ZBL) Van der Waals Template for Epitaxial GaAs Lift Off
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用于外延 GaAs 剥离的 In2Se3Zinc-Blende Like (ZBL) 范德华模板的 XRD 极图分析
DOI：
10.1109/pvsc.2018.8547396
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Masafumi Yamaguchi
中科院分区：
文献类型：
--
作者：
Nobuaki Kojima;Yu-Cian Wang;Kei Kawakatsu;Yoshio Ohshita;Masafumi Yamaguchi
用分子束外延技术在GaAs(111)衬底和衬底上生长了In2Se3和GaAs双层薄膜。用2θ-ω扫描和X-射线衍射极图对其晶体结构和晶向分布进行了表征。利用α(111)2Off衬底获得了单畴生长的GaAsIn2Se3。邻近衬底通过主导表面台阶边缘的台阶流生长来抑制孪晶的形成，In2Se3的晶体取向是在异质界面上确定的。从占主导地位的三个αIn2Se3(1 0 17)平面峰估计了界面结构。
Double layers of In2Se3and GaAs were grown on GaAs (111) just and 2ooff substrates by MBE. The crystal structure and crystallographic orientation distribution were characterized by the 2θ-ω scan and pole figure of X-ray diffraction (XRD). Single domain growth of α-In2Se3was obtained by using GaAs (111) 2ooff substrate. The vicinal substrates can suppress twin formation by predominating the step-flow growth at the surface step edge, and the crystallographic orientation of In2Se3is defined at the hetero-interface. From the dominant three α In2Se3(1 0 17) plane peaks, the interface structure is estimated.