Low emissivity double sides antireflection coatings for silicon wafer at infrared region
Low emissivity double sides antireflection coatings for silicon wafer at infrared region
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硅片红外区低辐射双面增透膜
DOI：
10.1016/j.jallcom.2018.01.384
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发表时间：
2018-04-25
影响因子：
6.2
通讯作者：
Zhang, Xian-Zhou
中科院分区：
文献类型：
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作者：
Dong, Chao;Lu, Hai;Zhang, Xian-Zhou
硅晶片，当从带边工作到远红外时，固有地具有几乎偏振无关的低本征损耗-用于红外器件的合适的红外透射窗片。然而，由于大的导纳失配，入射光大部分在硅-空气界面处被反射。我们表明，利用双面非四分之一波抗反射涂层（ARC）可以充分抑制硅片的反射。基本的机制是ARC与硅晶片和空气结构的界面被选择为使得匹配导纳具有真实的值。对于优化的双面ARC，我们在各种光入射角下在宽的红外光谱范围内实现了-4%的最低光反射率，这上级单面导纳匹配ARC。我们进一步证明，与裸硅片相比，观察到的双面ARC硅片的红外法向光谱发射率仅增加了-0.02。由于上述优点不以表面改性为代价，这种结构有望应用于低发射率红外窗口，用于辐射测温，传感等。（c）2018 Elsevier B. V.版权所有。
Silicon wafer, when operating from the band edge to the far infrared, inherently possess nearly polarization-independent low intrinsic loss - an appropriate infrared transmission window sheet for infrared devices. However, the incident light is mostly reflected at the silicon-air interface due to large admittance mismatch. We show that the reflection of silicon wafer may be sufficiently suppressed by utilizing a double sides non-quarter wave anti-reflective coatings (ARCs). The underlying mechanism is that the interfaces of the ARCs with the silicon wafer and the air structure are selected such that the matched admittance has a real value. For an optimized double sides ARCs, we achieve a lowest light reflectance of -4% over a broad infrared spectral range at various light incident angles, which is superior to a single side admittance-matched ARCs. We further demonstrate that, compared with bare silicon wafer, the observed infrared normal spectral emissivity of the silicon wafer with the double sides ARCs increased by only -0.02. As the advantages above are not at a cost of surface modification, this structure is promising to be applied in low emissivity infrared window for radiation thermometry, sensing, and so on. (c) 2018 Elsevier B.V. All rights reserved.