One-dimensional silicon nanostructures fabricated by thermal evaporation
One-dimensional silicon nanostructures fabricated by thermal evaporation
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热蒸发法制备一维硅纳米结构
DOI：
10.1016/j.msec.2005.09.106
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Deren Yang
中科院分区：
文献类型：
--
作者：
Jun Yu;J. Sha;Lei Wang;Qing Yang;Deren Yang
通过在1050℃下蒸发二氧化硅(SiO)粉末并将产物收集在镀金的硅衬底上，制备了一维硅纳米结构。观察到直径约为20-30 nm、长度为数十微米的均匀致密的硅纳米线。然而，当使用未镀金的硅衬底时，发现了硅纳米线的簇状结构。此外，还发现了具有明显核壳结构的链状硅纳米结构，呈现出由圆柱形截面和振荡截面组成的同质结结构。最后，检测到了具有相同分支直径的二叉形硅纳米线，这对目前硅纳米线的生长机理很难理解。
One-dimensional silicon nanostructures were fabricated by evaporating silicon monoxide (SiO) powders at 1050 °C and collecting the products on gold-coated silicon substrates. The uniform and dense silicon nanowires with the diameter of about 20–30 nm and the length of tens of microns were observed. However, the tufts of silicon nanowires were found while the silicon substrates without gold coating were used. Moreover, the chain-like silicon nano-structures with obvious core-shell morphology that displays a homojunction structure composed of cylindrical section and the oscillating section was also found. Finally, the biforked silicon nanowires with the same diameter of branches were detected, which is hard to understand on the current growth mechanism of silicon nanowires.