50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems
50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems
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DOI：
10.1021/ph5001605
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发表时间：
2014-09-01
期刊：
影响因子：
7
通讯作者：
Kurz, Heinrich
中科院分区：
文献类型：
--
作者：
Schall, Daniel;Neumaier, Daniel;Kurz, Heinrich
光数据链路是当今电信基础设施的骨干。将电子和光学元件集成在一个芯片上是进一步提高系统性能的最有吸引力的途径之一。在这里，我们提出了基于CVD生长的石墨烯硅光子波导的光电探测器的制造。该器件在1550 nm的C波段无偏置工作，非本征-3 dB带宽为41 GHz。我们证明，这些探测器的工作数据速率高达50 GBit/s，具有良好的信号完整性。
Optical data links are the backbone of today's telecommunication infrastructure. The integration of electronic and optic components on one chip is one of the most attractive routes to further increase the system performance. Here, we present the fabrication of photodetectors based on CVD-grown graphene on silicon photonic waveguides. The devices operate bias-free in the C-band at 1550 nm and show an extrinsic -3 dB bandwidth of 41 GHz. We demonstrate that these detectors work at data rates up to 50 GBit/s with excellent signal integrity.