Sub-Pixel Position Sensing for Pixelated, 3-D Position Sensitive, Wide Band-Gap, Semiconductor, Gamma-Ray Detectors

Sub-Pixel Position Sensing for Pixelated, 3-D Position Sensitive, Wide Band-Gap, Semiconductor, Gamma-Ray Detectors
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适用于像素化、3D 位置敏感、宽带隙、半导体、伽马射线探测器的子像素位置传感

DOI:
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发表时间:
2011
影响因子:
1.8
通讯作者:
Zhong He
Zhong He
中科院分区:
工程技术3区
文献类型:
--
作者:
Yuefeng Zhu;S. Anderson;Zhong He

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本文提出了一种提高像素化三维位置敏感半导体探测器横向位置分辨率的技术。横向位置分辨率的提高允许更精确的康普顿成像计算、探测器响应校准和基于相互作用的校正,从而获得更好的光谱和成像性能。在像素化探测器中,伽马射线相互作用位置的横向位置分辨率传统上受限于构成阳极阵列的各个像素的尺寸。亚像素位置分辨率是通过比较邻近电荷收集像素的像素上感应的瞬时电荷量的算法来实现的。通过对数字化前置放大脉冲波形的分析,采用优化的数字信号处理算法,对非采集像素的感应电荷进行了测量。用一块像素间距为1.72 mm的2.0 cm×2.0 cm×1.5 cm的CdZnTe探测器演示了亚像素定位技术。用一台100μm的钨准直器验证了该方法的准确性。在662keV下测得的亚像素位置分辨率为230μm。这一结果与在假设4keV半高宽电子噪声的详细系统模拟的基础上,在662keV下的180keVμm的预测值是一致的。
This article presents a technique to improve the lateral position resolution of pixelated 3-D position sensitive, semiconductor detectors. Improvements in lateral position resolution allow for more precise Compton-imaging calculations, detector-response calibrations, and interaction-based corrections resulting in better spectroscopic and imaging performance. In pixelated detectors, the lateral position resolution of a gamma-ray interaction location is traditionally limited to the dimensions of the individual pixels that constitute an anode array. Sub-pixel position resolution is achieved through algorithms that compare the amount of transient charge induced on pixels that neighbor a charge-collecting pixel. Measurements of the charge induced on the non-collecting pixels are made through analysis of digitized preamplifier pulse waveforms using optimized digital signal processing algorithms. A 2.0 cm × 2.0 cm × 1.5 cm CdZnTe detector with a pixel pitch of 1.72 mm is used to demonstrate the sub-pixel position technique. A 100 μm tungsten collimator is used to verify the accuracy of the method. The measured sub-pixel position resolution is 230 μm at 662 keV. This result is consistent with the predicted value of 180 μm at 662 keV based on a detailed system simulation assuming 4 keV FWHM electronic noise.