High throughput processing of CdTe/CdS solar cells with thin absorber layers
High throughput processing of CdTe/CdS solar cells with thin absorber layers
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具有薄吸收层的 CdTe/CdS 太阳能电池的高通量加工
DOI：
10.1109/pvsc.2008.4922463
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
W. Buchanan
中科院分区：
文献类型：
--
作者：
B. McCandless;W. Buchanan
本文介绍了沉积和沉积后的处理方法适合大面积的CdTe基光伏组件的快速处理。给出了CdS/CdTe太阳电池的工艺优化原理。通过气相传输（VT）在市售的钠钙玻璃基板上沉积具有亚微米厚度的CdTe膜，并在CdCl 2蒸气中处理，每个板的处理时间为2分钟。通过降低源极温度来减小CdTe膜的厚度，并且基于CdS扩散到多晶CdTe膜中的3D建模来选择处理温度。对于在N2/O2环境中在550°C和生长速率<10 μm/min下沉积的膜，量化了0.3至3 μm膜厚的CdTe微结构和光学性质，并与具有5 μm CdTe的基线样品进行了比较。用CdCl 2蒸气处理2 min和温和腐蚀处理1.5 μm和0.8 μ mVTCdTe太阳电池，其转换效率分别为11%和8%。
This paper presents deposition and post-deposition processing methods amenable for rapid processing of large area CdTe-based photovoltaic modules. A process optimization rationale is given for superstrate CdS/CdTe solar cells. CdTe films with sub-micron thickness were deposited by vapor transport (VT) on commercially available soda-lime glass substrates and treated in CdCl2 vapor with processing time of 2 min per plate. CdTe film thickness was reduced by lowering source temperature, and treatment temperatures were selected based on 3D modeling of CdS diffusion into polycrystalline CdTe films. The CdTe microstructure and optical properties for 0.3 to 3 μm film thickness are quantified for films deposited in N2/O2 ambient at 550°C and growth rates ∼10 μm/min and are compared to baseline samples with 5 μm CdTe. Solar cells with 1.5 μm and 0.8 μm VT CdTe processed with 2 min vapor CdCl2 treatment and mild etching have conversion efficiencies of 11% and 8%, respectively.