Application of the equivalent-index method to DH diode lasers.
Application of the equivalent-index method to DH diode lasers.
复制标题
等效折射率法在 DH 二极管激光器中的应用。
DOI：
10.1364/ao.18.003724
复制
发表时间：
1979
期刊：
影响因子：
1.9
通讯作者：
E. Kapon
中科院分区：
文献类型：
--
作者：
W. Streifer;E. Kapon
施乐帕洛阿尔托研究中心，帕洛阿尔托，加州94304。1979年8月6日收到。0003-6935/79/223724-02$00.50/0。© 1979年美国光学学会。矩形结构中的二维光波导问题对于理解半导体激光器的特性以及集成光学的应用都具有重要意义。在研究这种结构中广泛使用的一种技术是等效折射率法。它似乎是特别适合于高度不对称的情况下，如存在于GaAs二极管激光器。在该器件中，在材料中具有一个波长量级的折射率和尺寸的离散阶跃的分层电介质结构存在于一个方向（例如x）上，而折射率的真实的和/或虚部在通常称为横向的垂直横向（y）上缓慢且连续地变化。刚刚描述的结构在图1中示出，其中折射率的平方是每个区域中y的函数。具体地说，
Xerox Palo Alto Research Center, Palo Alto, California 94304. Received 6 August 1979. 0003-6935/79/223724-02$00.50/0. © 1979 Optical Society of America. The problem of 2-D optical waveguiding in rectangular structures is of some importance in understanding the char acteristics of diode lasers as well as for integrated-optics ap plications. One technique that has been widely used in the study of such structures is the equivalent-index method. It appears to be especially appropriate in highly asymmetric situations such as exist in the GaAs diode laser. In that device a layered dielectric structure with discrete steps in refractive index and dimensions on the order of one wavelength in the material exists in one direction (say x), whereas the real and/or imaginary parts of the refractive index vary slowly and con tinuously in the perpendicular transverse direction (y), usually called the lateral direction. The structure just described is illustrated in Fig. 1, wherein the squared refractive index is a function of y in each region. Specifically,