Nano-patterning and single electron tunnelling using STM
Nano-patterning and single electron tunnelling using STM
复制标题
使用 STM 的纳米图案和单电子隧道
DOI：
10.1088/0957-4484/10/2/317
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
P. Blanckenhagen
中科院分区：
文献类型：
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作者：
Xiaoming Hu;D. Sarid;P. Blanckenhagen
利用金针尖扫描隧道显微镜，通过对针尖-样品隧道结施加一系列偏压脉冲，在洁净的台阶Si（111）表面上形成团簇，并形成纳米点、线和纳米孔。可以实现直径小至几nm的纳米点。通过减小纳米点之间的距离，可以产生几nm宽和几百nm长的连续纳米线，其可以用作微电子元件和纳米电子元件之间的连接。在Si（111）表面上还产生了由许多直径为几nm的Au点形成的直径约40 nm的纳米围栏。研究了纳米点的单电子隧穿效应，发现室温下Au针尖-Au团簇-Si衬底双结系统的I-V（电流-电压）曲线中存在“库仑台阶”。
A scanning tunnelling microscope with a gold tip was used to create clusters and form nano-dots, lines and corrals on a clean stepped Si(111) surface by applying a series of bias pulses to the tip-sample tunnelling junction. Nano-dots with diameters as small as a few nm can be realized. By decreasing the distances between nano-dots, it is possible to create continuous nano-lines of a few nm wide and over a few hundred nm long, which can be used as connections between micro- and nano-electronic components. A nano-corral of about 40 nm in diameter formed by many Au dots of a few nm in diameter each was also created on the Si(111) surface. Single electron tunnelling effects through nano-dots were studied and it was found that 'Coulomb staircases' can be observed in the I-V (current-voltage) curve at room temperature through an Au tip-Au cluster-Si substrate double junction system.