Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
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DOI：
10.1038/s41598-020-59033-z
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发表时间：
2020-02
影响因子：
4.6
通讯作者：
M. Reshchikov;M. Vorobiov;O. Andrieiev;K. Ding;N. Izyumskaya;V. Avrutin;A. Usikov;H. Helava;Y. Makarov
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文献类型：
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作者：
M. Reshchikov;M. Vorobiov;O. Andrieiev;K. Ding;N. Izyumskaya;V. Avrutin;A. Usikov;H. Helava;Y. Makarov
利用光致发光（PL）技术研究了氢化物气相外延（HVPE）生长的GaN中碳的浓度。PL数据进行了比较，从二次离子质谱（西姆斯）测量获得的杂质的配置文件。PL和西姆斯数据的比较表明，在西姆斯剖面中，深度高达1 μm的C和O浓度明显较高，但这并不代表这些物质在GaN基质中的深度分布，而是由生长后表面污染和从表面敲入的杂质物质引起的。特别地，通过反应离子蚀刻补充的PL分析高达400 nm的深度表明，在HVPE生长的GaN样品的任何深度处，氮位点中的碳浓度低于2-5 × 1015 cm-3。我们证明，PL是一个非常敏感和可靠的工具，以确定在GaN基质中的杂质浓度。
Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that apparently high concentrations of C and O at depths up to 1 µm in SIMS profiles do not represent depth distributions of these species in the GaN matrix but are rather caused by post-growth surface contamination and knocking-in impurity species from the surface. In particular, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the concentration of carbon in nitrogen sites is below 2–5 × 1015cm−3at any depth of GaN samples grown by HVPE. We demonstrate that PL is a very sensitive and reliable tool to determine the concentrations of impurities in the GaN matrix.