LOW-TEMPERATURE B DOPING OF SI BY SYNCHROTRON RADIATION IRRADIATION OF DISILANE/DECABORANE DURING GAS-SOURCE MOLECULAR BEAM EPITAXY
LOW-TEMPERATURE B DOPING OF SI BY SYNCHROTRON RADIATION IRRADIATION OF DISILANE/DECABORANE DURING GAS-SOURCE MOLECULAR BEAM EPITAXY
复制标题
气源分子束外延过程中乙硅烷/癸硼烷同步辐射辐照对硅的低温B掺杂
DOI：
10.1063/1.114969
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发表时间：
1995
影响因子：
4
通讯作者：
Y. Utsumi
中科院分区：
文献类型：
--
作者：
Y. Utsumi
利用二硅烷分子束外延(MBE)实现了同步辐射(SR)辐照下的超低温B掺杂。结果表明，在Si外延过程中，SR辐照可以显著提高B的掺入，并且B的浓度与十硼烷分压成线性关系。此外，即使在80 °C下，也可以通过源分子的SR激发获得掺杂外延膜，而传统的气源分子束外延方法到目前为止还不能实现硅的生长。
Very low‐temperature doping of B achieved by synchrotron radiation (SR) irradiation has been performed using disilane molecular beam epitaxy (MBE). It was observed that B incorporation can be significantly enhanced by SR irradiation during Si epitaxy and B concentration had linear dependence on the decaborane partial pressure. Furthermore, doped epitaxial film can be attained by SR excitation of source molecules even at 80 °C, where the conventional gas‐source MBE method can not so far achieve Si growth.