Planarization process of single crystalline silicon asperity under abrasive rolling effect studied by molecular dynamics simulation
Planarization process of single crystalline silicon asperity under abrasive rolling effect studied by molecular dynamics simulation
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DOI：
10.1007/s00339-012-7026-z
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发表时间：
2012-06
期刊：
影响因子：
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通讯作者：
Lina Si;D. Guo;Jianbin Luo;G. Xie
中科院分区：
文献类型：
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作者：
Lina Si;D. Guo;Jianbin Luo;G. Xie
在化学机械抛光（CMP）过程中，磨粒的复杂行为对晶片表面的平坦化起着重要作用。嵌入垫中的颗粒通过犁削去除材料，而浸入浆料中的颗粒通过在晶片表面上滚动。采用分子动力学模拟方法，研究了颗粒在不同的下压力和外驱动力作用下在粗糙表面上的滚动过程。模拟结果揭示了微凸体在轧制过程中的形状演变规律，分析了模拟系统的能量变化和作用在SiO2颗粒上的相互作用力。结果表明，下压力和驱动力对材料去除量有重要影响。当施加在颗粒上的向下力和驱动力相对较小时，材料去除主要发生在粗糙体的前端;当向下力和驱动力足够大时，例如，100 nN时，材料去除可以发生在整个粗糙体的顶部。能量变化和相互作用力的分析为模拟结果提供了有利的解释。
In the chemical mechanical polishing (CMP) process, the complex behaviors of abrasive particles play important roles in the planarization of wafer surface. Particles embedded in the pad remove materials by ploughing, while particles immersed in the slurry by rolling across the wafer surface. In this paper, processes of the particle rolling across a silicon surface with an asperity under various down forces and external driving forces were studied using molecular dynamics (MD) simulation method. The simulations clarified the asperity shape evolution during the rolling process and analyzed the energy changes of the simulation system and the interaction forces acted on the silica particle. It was shown that both the down force and the driving force had important influences on the amount of the material removed. With relatively small down forces and driving forces applied on the particle, the material removal occurred mainly in the front end of the asperity; when the down forces and driving forces were large enough, e.g., 100 nN, the material removal could take place at the whole top part of the asperity. The analysis of energy changes and interaction forces provided favorable explanations to the simulation results.