Electrostatic effect of Au nanoparticles on near-infrared photoluminescence from Si/SiGe due to nanoscale metal/semiconductor contact.
Electrostatic effect of Au nanoparticles on near-infrared photoluminescence from Si/SiGe due to nanoscale metal/semiconductor contact.
复制标题
由于纳米级金属/半导体接触，Au 纳米粒子对 Si/SiGe 近红外光致发光的静电效应。
DOI：
10.1088/1361-6528/aa61ec
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发表时间：
2017
期刊：
影响因子：
3.5
通讯作者：
Zhong Zhenyang
中科院分区：
文献类型：
--
作者：
Yin Yefei;Wang Ze;Wang Shuguang;Bai Yujie;Jiang Zuimin;Zhong Zhenyang
在没有表面等离子体共振的激发下，Au纳米粒子对Si和SiGe的光致发光(PL)进行了综合修饰。此外，发光敏感地依赖于Au纳米颗粒的尺寸、激发功率以及Au纳米颗粒与SiGe之间的硅层厚度。在没有外加偏压或外注入载流子的情况下，通过纳米金属/半导体肖特基结的电子转移自然带电的金纳米粒子的静电效应被提出了一个模型。该模型很好地解释了所有独特的PL功能。研究还发现，Au纳米粒子可以显著改变Au纳米粒子下方纳米尺度区域内载流子的能带结构、分布和跃迁。结果表明，半导体上的Au纳米粒子可以有效地调制光与物质的相互作用。
Photoluminescence (PL) from Si and SiGe is comprehensively modified by Au NPs under excitation without surface plasmon resonance. Moreover, the PL sensitively depends on the size of the Au NPs, the excitation power and the thickness of the Si layer between the Au NPs and SiGe. A model is proposed in terms of the electrostatic effects of Au NPs naturally charged by electron transfer through the nanoscale metal/semiconductor Schottky junction without an external bias or external injection of carriers. The model accounts well for all the unique PL features. It also reveals that Au NPs can substantially modify the energy band structures, distribution and transition of carriers in the nanoscale region below the Au NPs. Our results demonstrate that Au NPs on semiconductors can efficiently modulate light–matter interaction.