Subwavelength Nanowire Lasers on a Silicon Photonic Crystal Operating at Telecom Wavelengths
Subwavelength Nanowire Lasers on a Silicon Photonic Crystal Operating at Telecom Wavelengths
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DOI：
10.1021/acsphotonics.6b00830
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发表时间：
2017-01
期刊：
影响因子：
7
通讯作者：
A. Yokoo;M. Takiguchi;M. Birowosuto;K. Tateno;Guoqiang Zhang;E. Kuramochi;A. Shinya;H. Taniyama
中科院分区：
文献类型：
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作者：
A. Yokoo;M. Takiguchi;M. Birowosuto;K. Tateno;Guoqiang Zhang;E. Kuramochi;A. Shinya;H. Taniyama
在这里，我们报告了在电信波长的亚波长半导体纳米线（直径100纳米）中激光振荡的成功演示。虽然亚波长纳米线太细，无法单独配置有效的光腔，但我们将纳米线与硅光子晶体结合，形成了纳米线诱导的混合纳米腔。这种独特的结构使我们能够在硅平台上实现高效的基于纳米线的纳米激光器。我们的系统研究，包括L-L特性，发射波长，发射线宽度，发射寿命和光子相关，明确地揭示了纳米线在4k下的激光操作。此外，我们还成功地通过在光子晶体中的沟槽中移动纳米线来改变激光振荡波长，这揭示了这种混合纳米腔的独特之处。这是电信波段亚波长纳米线激光器的首次演示，这对硅光子学应用也很重要。
Here we report the successful demonstration of lasing oscillation in a subwavelength semiconductor nanowire (100 nm in diameter) at telecom wavelengths. Although a subwavelength nanowire is too thin to configure an efficient optical cavity by itself, we have combined the nanowire with a Si photonic crystal to form a nanowire-induced hybrid nanocavity. This unique configuration enables us to realize an efficient nanowire-based nanolaser on a Si platform. Our systematic study, which included L–L characteristics, emission wavelength, emission line width, emission lifetime, and photon correlation, has unambiguously revealed the lasing operation of the nanowire at 4 K. In addition, we have succeeded in changing the laser oscillation wavelength by moving the nanowire through a trench in the photonic crystal, which reveals the unique feature of this hybrid nanocavity. This is the first demonstration of telecom band subwavelength nanowire lasers, which may also be important for Si photonics applications.