Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes
Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes
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用于纳米级铜金属化方案的原子层沉积超薄铂的特性
DOI：
10.1557/jmr.2007.0152
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发表时间：
2007
影响因子：
2.7
通讯作者：
A. Kaloyeros
中科院分区：
文献类型：
--
作者：
Yu Zhu;K. Dunn;A. Kaloyeros
发展了一种热金属有机原子层沉积(ALD)工艺，用于原位连续生长用作后续电镀铜的阻挡层/种子层的Pt/TaN_x堆栈。以甲基环戊二烯基三甲基铂(MeCpPtMe_3)和氧气(O_2)为共反应物，交替脉冲脉冲沉积超薄铂薄膜。通过研究铂薄膜生长速率与MeCpPtMe_3和O_2曝光量的饱和关系，建立并优化了ALD工艺窗口，控制了反应物脉冲的长度和分离反应物脉冲的惰性气体吹扫循环的持续时间。由此产生的低温(300℃)ALD铂工艺获得了均匀连续的铂薄膜，典型的碳和氧杂质水平分别约为2.5at.%和1at.%。在长宽比为11：1的120 nm沟槽结构中，薄膜的一致性接近100%。
A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaN_x stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe_3) and oxygen (O_2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe_3 and O_2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.