Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys
Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys
复制标题
Ge1-xSix 合金中的位错解离和堆垛层错能
DOI：
10.1080/095008300176155
复制
发表时间：
2000
影响因子：
1.2
通讯作者：
D. Shindo
中科院分区：
文献类型：
--
作者：
I. Yonenaga;S. Lim;D. Shindo
本文用弱束透射电子显微术研究了Ge_（1-x）Six合金在0 < x < 1范围内的形变位错。它们被分解成Shockley部分位错边界内禀堆垛层错。随着Si含量的增加，合金中的本征层错能从61 +/- 10降低到55 +/- 10 mJm-2。
Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. They are dissociated into Shockley partial dislocations bounding intrinsic stacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 +/- 10 to 55 +/- 10 mJm-2 with increasing Si content.