Preparation and characterization of Cu_2ZnGeSe_4 thin films by selenization method using the Cu-Zn-Ge evaporated layer precursors

Preparation and characterization of Cu_2ZnGeSe_4 thin films by selenization method using the Cu-Zn-Ge evaporated layer precursors
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Cu-Zn-Ge蒸镀层前驱体硒化法制备Cu_2ZnGeSe_4薄膜及表征

DOI:
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发表时间:
2005
期刊:
Journal of Crystal Growth 275
影响因子:
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通讯作者:
A.Katsui
A.Katsui
中科院分区:
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文献类型:
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作者:
H.Matsushita;T.Ochiai;A.Katsui

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