Annealing of GaN under high pressure of nitrogen
Annealing of GaN under high pressure of nitrogen
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氮化镓在高压氮气下的退火
DOI：
10.1088/0953-8984/14/44/433
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
S. Krukowski
中科院分区：
文献类型：
--
作者：
S. Porowski;I. Grzegory;D. Kolesnikov;W. Lojkowski;V. Jager;W. Jager;V. Bogdanov;T. Suski;S. Krukowski
氮化镓、氮化铝和氮化铟是蓝光光电器件的基本材料。这些器件的技术的重要部分是在高温下退火。概述了Ga-N系统的热力学性质及其对GaN基材料高氮压退火应用的影响。将Zn、Mg和Au在高位错密度异质外延GaN/Al 2 O3层中的扩散与在无位错GaN单晶和同质外延层中的扩散进行比较。研究表明，高位错密度可以极大地改变扩散速率，从而强烈影响氮化物器件的性能。还将考虑AlGaN/GaN和InGaN/GaN量子阱（QW）结构中Al、Ga和In的相互扩散。它将被证明，在相反的稳定性的金属接触，这是强烈的影响位错，相互扩散的第III族原子在量子阱结构中不强烈影响的存在下，高位错密度。这与两种扩散过程中控制慢过程的速率不同有关。相互扩散过程的这一特征解释了异质外延技术在基于氮化物的发光二极管技术中的成功。
Gallium nitride, aluminum nitride and indium nitride are basic materials for blue optoelectronic devices. The essential part of the technology of these devices is annealing at high temperatures. Thermodynamic properties of the Ga–N system and their consequences to application of high nitrogen pressure for the annealing of GaN based materials are summarized. The diffusion of Zn, Mg and Au in high dislocation density heteroepitaxial GaN/Al2O3 layers will be compared with the diffusion in dislocation-free GaN single crystals and homoepitaxial layers. It will be shown that high dislocation density can drastically change the diffusion rates, which strongly affects the performance of nitride devices. Inter-diffusion of Al, Ga and In in AlGaN/GaN and InGaN/GaN quantum well (QW) structures will be also considered. It will be shown that in contrast to stability of metal contacts, which is strongly influenced by dislocations, the inter-diffusion of group III atoms in QW structures is not affected strongly by the presence of high dislocation density. This is related to the different rate controlling slow process in these two diffusion processes. This feature of interdiffusion processes explains the success of heteroepitaxial techniques in the technology of nitride based light emitting diodes.