The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction
The Large-Scale Preparation and Optical Properties of MoS2/WS2 Vertical Hetero-Junction
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MoS2/WS2垂直异质结的大规模制备及其光学性能
DOI：
10.3390/molecules25081857
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发表时间：
2020-04-02
期刊：
影响因子：
4.6
通讯作者：
Yang, Kun
中科院分区：
文献类型：
--
作者：
Han, Tao;Liu, Hongxia;Yang, Kun
各种异质结可以被构造成不同光电器件中的基本结构单元，例如光电探测器、太阳能电池、传感器和发光二极管。本研究采用两步常压化学气相沉积（APCVD）法和干法转移法制备了大面积高质量的MoS 2/WS 2垂直异质结，并得到了相应的最佳反应条件。利用光学显微镜、拉曼光谱、光致发光光谱、原子力显微镜和场发射扫描电子显微镜等对MoS 2/WS 2垂直异质结的形貌、成分和光学性质进行了系统的表征。与机械转移法相比，APCVD法和干转移法制备的MoS 2/WS 2垂直异质结样品杂质含量更低，界面更清洁，层间耦合更紧密。此外，还进一步研究了MoS 2/WS 2垂直异质结的层间强耦合和有效的层间电荷转移。与单一的MoS 2或WS 2材料相比，MoS 2/WS 2垂直异质结的光致发光强度显著降低。总的来说，这项研究有助于实现各种货车范德华异质结的大规模制备，为光电子器件的新应用奠定基础。
A variety of hetero-junctions can be constructed to form the basic structural units in the different optoelectronic devices, such as the photo-detectors, solar cells, sensors and light-emitting diodes. In our research, the large-area high-quality MoS2/WS2 vertical hetero-junction are prepared by the two-step atmospheric pressure chemical vapor deposition (APCVD) methods and the dry transfer method, and the corresponding optimal reaction conditions of MoS2/WS2 vertical hetero-junction are obtained. The morphology, composition and optical properties of MoS2/WS2 vertical hetero-junction are systematically characterized by the optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy and the field emission scanning electron microscopy. Compared to the mechanical transfer method, the MoS2/WS2 vertical hetero-junction sample obtained by the APCVD and dry transfer methods have lower impurity content, cleaner interfaces and tighter interlayer coupling. Besides, the strong interlayer coupling and effective interlayer charge transfer of MoS2/WS2 vertical hetero-junction are also further studied. The photoluminescence intensity of MoS2/WS2 vertical hetero-junction is significantly reduced compared to the single MoS2 or WS2 material. In general, this research can help to achieve the large-scale preparation of various Van der Waals hetero-junctions, which can lay the foundation for the new application of optoelectronic devices.