Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode
Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode
复制标题
反射型负电子亲和势GaN光电阴极的量子效率衰减机制
DOI：
10.7498/aps.59.2855
复制
发表时间：
2010-04
期刊：
影响因子：
--
通讯作者：
Zou Ji-Jun
中科院分区：
文献类型：
--
作者：
Chang Ben-Kang;Niu Jun;Du Xiao-Qing;Qiao Jian-Liang;Zou Ji-Jun
针对反射式负电子亲和势(NEA)GaN光电阴极的衰减趋势和不同波段对应的量子效率衰减速度的不同，参考国外作者提供的反射式NEA GaN光电阴极量子效率曲线的衰减趋势，研究了反射式NEA GaN光电阴极的量子效率衰减机理。GaN光电阴极的表面模型为[GaN(Mg)：CS]：O-Cs。并考虑了量子效率衰减过程中表面势垒的变化。有效偶极子数量的减少是导致量子效率降低的根本原因。正是表面I、II势垒形状的变化导致了不同波段对应的量子效率下降速度的差异。
Aimming at the decay tendency of reflection-mode negative electron affinity (NEA) GaN photocathode and the different decay speeds of quantum efficiency corresponding to the different wave bands, and referring to the decay tendency of quantum efficiency curve provided by foreign authors for reflection-mode NEA GaN photocathode, the quantum efficiency decay mechanism for reflection-mode NEA GaN photocathode was studied. The surface model ［GaN (Mg) : Cs］: O-Cs for GaN photocathode after being activated with cesium and oxygen was used. And the change of surface barrier in the decay course of quantum efficiency was considered. The reduction of the effective dipole quantity is the basic reason causing quantum efficiency reduction. And it is the change of surface I, II barrier shape that causes the difference of dropping speeds of quantum efficiencies corresponding to different wave bands.