Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy
Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy
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硅分子束外延中重硼掺杂过程中掺入过程的温度依赖性
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
E. Parker
中科院分区：
文献类型：
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作者：
C. Parry;R. Kubiak;S. Newstead;T. Whall;E. Parker
硼掺杂层通过硅分子束外延生长以在900 ° C与450 °C之间的温度下建立掺入工艺。对于超过650 °C的温度，当掺杂水平超过固溶度极限时，形成硼的表面累积相。该表面相的性质被用来确定硼在硅中的溶解度极限。在750 °C以上，测得的平衡溶解度极限在1019-cm-3范围内，与先前公布的退火数据非常一致，并显示出随着温度的降低而逐渐降低。低于650 °C，导致表面相形成的过程在动力学上受到限制，表现为硼溶解度极限的急剧增加，达到1 × 1020 cm−3以上的完全活化水平。在中间的生长温度下，掺杂剂的活化程度被发现是依赖于生长速率。在低温下生长的完全激活的高掺杂硼层对非原位退火的稳定性是…
Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450 °C. For temperatures exceeding 650 °C a surface accumulated phase of boron was formed when doping levels exceeded solid solubility limits. The properties of this surface phase were used to determine solubility limits for boron in silicon. Above 750 °C, the measured equilibrium solubility limit was in the 1019‐cm−3 range in good agreement with previously published annealing data and showing a gradual decrease with decreasing temperature. Below 650 °C, the processes leading to the formation of the surface phase were kinetically limited, manifested by a sharp increase in boron solubility limit, with completely activated levels above 1 × 1020 cm−3 realized. At intermediate growth temperatures the degree of dopant activation was found to be dependent on growth rate. The stability of fully activated highly‐doped boron layers, grown at low temperatures, to ex situ annealing is ...