Characterization of of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction
Characterization of of misfit dislocations in Si quantum well structures enabled by STEM based aberration correction
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DOI：
10.1016/j.ultramic.2017.03.002
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发表时间：
2017-09-01
期刊：
影响因子：
2.2
通讯作者：
Lagos, Maureen J.
中科院分区：
文献类型：
--
作者：
Batson, Philip E.;Lagos, Maureen J.
像差校正技术在20世纪末的成功是在对原子分辨率成像的需求日益增长的时候出现的，以更好地理解影响半导体器件操作的已知结构缺陷，并推进对将形成未来器件基础的新结构和行为的研究。考虑到这一点，我们很高兴认识到Ondrej Krivanek对像差校正技术的成功所做的贡献，以及他将像差技术扩展到EELS设备，进一步承诺将结构研究与表征STEM中从meV到keV能量的行为结合起来。(C)2017爱思唯尔B.V.保留所有权利。
The success of aberration correction techniques at the end of the 20th century came at a time of increasing need for atomic resolution imaging to better understand known structural defects that influence semiconductor device operation, and to advance the search for new structures and behavior that will form the basis for devices in the future. With this in mind, it is a pleasure to recognize the contributions of Ondrej Krivanek to the success of aberration correction techniques, and his extension of aberration techniques to EELS equipment that further promises to unite structural studies with characterization of behavior from meV to keV energies in the STEM. (C) 2017 Elsevier B.V. All rights reserved.