Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
复制标题
表面和埋入沟道平带中的电子迁移率 $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ 采用 ALD 的 MOSFET $hbox{Al}_{2}hbox
DOI：
10.1109/led.2011.2107876
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发表时间：
2011
影响因子：
4.9
通讯作者：
Bentley S
中科院分区：
文献类型：
--
作者：
Bentley S
在本文中，我们通过比较采用原子层沉积al2o3栅极电介质和δ掺杂InGaAs/InAlAs/InP异质结构的表面和埋道In0.53Ga0.47As器件的迁移率，研究了平坦带III-V mosfet的标度势。在载流子密度为3 × 1012cm-2时，表面结构的电子迁移率峰值为4300 cm2/V·s，埋道结构的电子迁移率峰值为6600 cm2/V·s。与类似比例的反转通道器件相比，我们发现表面通道平带结构中的迁移率不会随着电子密度而迅速下降，而是在载流子浓度达到4 × 1012cm-2时保持较高的迁移率，然后在1 × 1013cm-2时缓慢下降到2000 cm2/V·s左右。我们相信这些是该材料系统的世界领先指标，也是为未来低功耗高尺寸CMOS的III-V MOSFET器件架构选择过程提供信息的重要发展。
In this letter, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried-channel In0.53Ga0.47As devices employing an atomic layer-deposited Al2O3gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm2/V · s and 6600 cm2/V · s at a carrier density of 3 × 1012cm-2were determined for the surfaceand buried-channel structures, respectively. In contrast to similarly scaled inversion-channel devices, we find that the mobility in surface channel flatband structures does not drop rapidly with the electron density, but rather high mobility is maintained up to carrier concentrations around 4 × 1012cm-2before slowly dropping to around 2000 cm2/V · s at 1 × 1013cm-2. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for the future low-power highly scaled CMOS.