View of the empty states of the Si(100)-(2×1) surface via scanning tunneling microscopy imaging at very low biases
View of the empty states of the Si(100)-(2×1) surface via scanning tunneling microscopy imaging at very low biases
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通过扫描隧道显微镜成像在极低偏置下观察 Si(100)-(2×1) 表面的空态
DOI：
10.1103/physrevb.59.7293
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发表时间：
1999
影响因子：
3.7
通讯作者：
M. Lagally
中科院分区：
文献类型：
--
作者：
X. Qin;M. Lagally
结果表明，在Si（100）-2{times}1表面的扫描隧道显微镜中使用非常低的偏置电压比使用典型的较大偏置电压实现了对顶部原子层的电子态的显著更大的灵敏度。随着灵敏度的提高，测量结果表明，传统的解释空态图像的Si（100）是不够的。提出了新的光谱分配观察到的功能。{版权} {美国物理学会}
It is shown that the use of very-low-bias voltages in scanning tunneling microscopy of the Si(100)-2{times}1 surface achieves significantly greater sensitivity to the electronic states of the top atomic layer than does the use of typical larger bias voltages. Measurements with the increased sensitivity demonstrate that the conventional interpretation of empty-state images of Si(100) is inadequate. New spectroscopic assignments for observed features are proposed. {copyright} {ital 1999} {ital The American Physical Society}