Exilispira thermophila gen. nov., sp nov., an anaerobic, thermophilic spirochaete isolated from a deep-sea hydrothermal vent chimney
Exilispira thermophila gen. nov., sp nov., an anaerobic, thermophilic spirochaete isolated from a deep-sea hydrothermal vent chimney
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DOI：
10.1099/ijs.0.65727-0
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发表时间：
2008-10-01
影响因子：
2.8
通讯作者：
Horikoshi, Koki
中科院分区：
文献类型：
--
作者：
Imachi, Hiroyuki;Saka, Sanae;Horikoshi, Koki
从日本冲绳海槽Iheya North油田深海热液喷口烟囱样品中分离到一种新的嗜热厌氧细菌RASEN(T)。该菌株在37 ~ 60℃（最适50℃）、2.5 ~ 3.5% (w/v) NaCl（最适2.5 ~ 3% NaCl）和pH 6.0 ~ 7.5（最适pH 7.0）条件下生长。该菌株仅在本研究检测的底物中的酵母提取物上生长。基因组DNA中G + C含量为27.1 mol%。主要脂肪酸为C-16:0、C- C-18:1（Delta 9）反式、C-18:0和C-18:1（Delta 9）顺式。基于16S rRNA基因序列对比分析，菌株RASEN(T)在螺旋体门内形成了较深的分支谱系，与其他物种序列相似性较低；门的相似性范围（72.1% - 80.6%）。因此，我们建议将其命名为Exilispira thermophila gen. nov., sp. nov.。Exilispira thermophila的类型菌株为菌株RASEN(T) (=JCM 14728(T) = NBRC 103205（T) = KCTC 5595(T)）。
A novel thermophilic, anaerobic bacterium, strain RASEN(T), was isolated from a deep-sea hydrothermal vent chimney sample collected in the Iheya North field, Okinawa Trough, Japan, at a water depth of 982 m. The cells were motile, Gram-negative and helical with hooked ends, 0.230.28 x 15-27 mu m in size with an approximate wavelength of 1.1 - 1.5 mu m. Growth of the strain was observed at 37-60 degrees C (optimum 50 degrees C, in 2.5-3.5 % (w/v) NaCl (optimum 2.5-3 % NaCl) and at pH 6.0-7.5 (optimum pH 7.0). The strain grew on yeast extract only of the substrates examined in this study. The G + C content of the genomic DNA was 27.1 mol%. Major fatty acids for the strain were C-16:0,C- C-18:1(Delta 9) trans, C-18:0 and C-18:1(Delta 9) cis. Based on comparative 16S rRNA gene sequence analysis, strain RASEN(T) formed a deeply branching lineage within the phylum Spirochaetes and had only low levels of sequence similarity with other species; of the phylum (range of similarity 72.1-80.6 %). Hence, we propose the name Exilispira thermophila gen. nov., sp. nov. The type strain of Exilispira thermophila is strain RASEN(T) (=JCM 14728(T) = NBRC 103205(T) = KCTC 5595(T)).